Basic Info.
Model NO.
Raytek-ZN001
Certification
RoHS
Manufacturing Technology
Discrete Device
Material
Compound Semiconductor
Model
ST
Package
CSP
Signal Processing
Analog Digital Composite and Function
Type
Intrinsic Semiconductor
Round Disk
D50mm*3
High Temperature Durability Durability
Excellent Thermal Shock Resistance
Excellent Acid Resistance
1000USD
Transport Package
Seperate Package
Specification
as requested
Trademark
Raytek
Origin
China
HS Code
38019090
Production Capacity
50000/Year
Product Description
The product is used in crystal-growing in Sic,EPI,Sic and PVT with the below advantage: 1.Pefect high temperature durability
2.Excellent thermal shock resistance
3.Excellent acid and alkali corrosion
4.Prevent the discharge of the plated matrix particles
5.The air tightness is excellent and covers all the micropores of the substrate
6. It has strong resistance to oxidation /silicification in high-temperature
D.SiC Physics characteristic
| Description | Unit | Parameter |
| Density | g/cm3 | 3.2 |
| Crystal type | β-SiC | |
| Hardness | HK | 2800 |
| Bending strength | Mpa | 170 |
| Yang's Modulus | Gpa | 320Gpa |
| Room temperature bonding force | Mpa | >8Mpa |
| size | mm | 0~2400 |
| thickness | um | 10~1000 |
| thermal conductivity | W/(m.K) | 290 |
| surface infrared reflectivity | % | 23 |
| depositable substrate | reaction sintering silicon carbide recrystalline carbonization | |
| silicon non-pressure sintered silicon carbide Graphite |
| D. Pyro physics charateristics | |||
| Description | Unit | Parallel to the coating surface | Perpendicular to the coating surface |
| Density | Mg/m | 2.2 | 2.2 |
| Hardness | HSD | 100 | - |
| Resistance rate | μΩ·m | 2.00-4.00 | 2~5x10 |
| Thermal expansion coefficient RT-500ºC | 105/K | <2.2 | 28 |
| Tensile strength | Mpa | 110 | - |
| Yang's module | Gpa | 30 | - |
| Thermal conductivity rate | W/(m·K) | 170-420 | 3 |
| Permeability | % | - | 0 |
| Surface infrared reflectivity | % | - | 50 |